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Zinc Metal Oxide Varistor Blocks For Surge Arresters, Used For DC And High Gradients
Product Details:
| Place of Origin: | Dongguan，Guangdong,China |
| Brand Name: | UCHI |
| Certification: | SGS.UL |
| Model Number: | D42*H20mm |
Payment & Shipping Terms:
| Minimum Order Quantity: | 5000PCS |
|---|---|
| Price: | Negotiable |
| Packaging Details: | Bulk |
| Delivery Time: | 5-7 days |
| Payment Terms: | T/T,Paypal,Western Union,Money gram |
| Supply Ability: | 5000,000,000PCS Per Month |
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Detail Information |
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| Highlight: | Zinc metal oxide varistor blocks,Surge arrester varistor blocks,DC high gradient varistor |
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Product Description
Zinc Metal Oxide Varistor Blocks For Surge Arresters
Designed for DC and High Gradient Applications
Zinc oxide varistors are voltage-dependent, nonlinear devices with electrical characteristics similar to back-to-back Zener diodes. Composed primarily of ZnO with small additions of other metal oxides (Bismuth, Cobalt, Manganese), these Metal Oxide Varistors (MOVs) are sintered into ceramic semiconductors during manufacturing.
The crystalline microstructure allows MOVs to dissipate high levels of transient energy across the entire device bulk, making them ideal for:
- Lightning suppression and high-energy transient protection in industrial/AC line applications
- DC circuit protection in low voltage power supplies and automotive applications
Technical Specifications
Type: varistor D42*H20mm
Material: Metal oxide varistor
Material: Metal oxide varistor
Key Structural Features
- Matrix of conductive ZnO grains separated by grain boundaries forming P-N junction semiconductor characteristics
- Grain boundaries block conduction at low voltages and enable nonlinear electrical conduction at higher voltages
- Each ZnO grain acts as a semiconductor junction at the grain boundary
- Fabricated by forming and sintering Zinc Oxide-based powders into ceramic parts
Performance Specifications
Application for Arrester Classification DH (IEC Standard)
| Specification | Diameter (mm) | Thickness (mm) | D.C. reference voltage (U1mA) (kV) | Max. ratio of residual voltage (8/20us) at 10kA | Current impulse withstand capability (4/10us kA) | Current impulse withstand capability (2ms A) | Recommended rated voltage (kV) | Maximum energy absorption capacity (kJ/kVr) |
|---|---|---|---|---|---|---|---|---|
| MOV36.5×20 | 36.5±0.5 | 20±0.5 | 4.0-4.8 | 1.83 | 100 | 350 | 3 | 2.5 |
| MOV36.5×30 | 36.58±0.5 | 30±0.5 | 6.2-7.0 | 1.83 | 100 | 350 | 4.5 | 2.5 |
| MOV42×20 | 42±0.5 | 20±0.5 | 4.0-4.8 | 1.81 | 100 | 400 | 3 | 3.4 |
| MOV42×30 | 42±0.5 | 30±0.5 | 6.2-7.0 | 1.81 | 100 | 400 | 4.5 | 3.4 |
Application for Arrester Classification SL (IEC Standard)
| Specification | Diameter (mm) | Thickness (mm) | D.C. reference voltage (U1mA) (kV) | Max. ratio of residual voltage (8/20us) at 10kA | Current impulse withstand capability (4/10us kA) | Current impulse withstand capability (2ms A) | Recommended rated voltage (kV) | Maximum energy absorption capacity (kJ/kVr) |
|---|---|---|---|---|---|---|---|---|
| MOV48×20 | 48±0.5 | 20±0.5 | 4.0-4.8 | 1.76 | 110 | 600 | 3 | 4.9 |
| MOV48×30 | 48±0.5 | 30±0.5 | 6.2-7.0 | 1.76 | 110 | 600 | 4.5 | 4.9 |
| MOV52×20 | 52±0.5 | 20±0.5 | 4.0-4.8 | 1.74 | 120 | 800 | 3 | 6.3 |
| MOV52×30 | 52±0.5 | 30±0.5 | 6.2-7.0 | 1.74 | 120 | 800 | 4.5 | 6.3 |
Application for Arrester Classification SM (IEC Standard)
| Specification | Diameter (mm) | Thickness (mm) | D.C. reference voltage (U1mA) (kV) | Max. ratio of residual voltage (8/20us) at 10kA | Current impulse withstand capability (4/10us kA) | Current impulse withstand capability (2ms A) | Recommended rated voltage (kV) | Maximum energy absorption capacity (kJ/kVr) |
|---|---|---|---|---|---|---|---|---|
| MOV60×20 | 60±0.5 | 20±0.5 | 4.0-4.8 | 1.72 | 150 | 1000 | 3 | 7.9 |
| MOV60×30 | 60±0.5 | 30±0.5 | 6.2-7.0 | 1.72 | 150 | 1000 | 4.5 | 7.9 |
| MOV64×20 | 64±0.5 | 20±0.5 | 4.0-4.8 | 1.69 | 150 | 1100 | 3 | 8.5 |
| MOV64×30 | 64±0.5 | 30±0.5 | 6.2-7.0 | 1.69 | 150 | 1100 | 4.5 | 8.5 |
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