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SOT-323 SS8050W NPN Silicon Epitaxial Planar Transistor for High Collector Current
Product Details:
| Place of Origin: | Dongguan China |
| Brand Name: | UCHI |
| Certification: | Completed |
| Model Number: | SS8050W |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1000PCS |
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| Price: | Negotiable |
| Packaging Details: | Standard |
| Delivery Time: | 3weeks |
| Payment Terms: | T/T, Western Union |
| Supply Ability: | 5000pcs |
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Detail Information |
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| Highlight: | SS8050W,npn silicon epitaxial planar transistor,High Collector Current epitaxial planar transistor |
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Product Description
SOT-323 high frequency low noise transistor(PNP)
FEATURES
- Collector Current.(IC= 1.5A)
- Complementary To SS8550W.
- Collector dissipation:PC=200mW(TC=25℃)
APPLICATIONS
- High Collector Current.
ORDERING INFORMATION
Type No.:SS8050W
Marking: Y1
Package Code:SOT-323
ELECTRICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified
| Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
| Collector-base breakdown voltage | V(BR)CBO | IC=100μA,IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=2mA,IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100μA,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V,IE=0 | 0.1 | μA | ||
| Collector cut-off current | ICEO | VCE=20V,IB=0 | 0.1 | μA | ||
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 0.1 | μA | ||
| DC current gain |
hFE |
VCE=1V,IC=100mA | 120 | 400 | ||
| VCE=1V,IC=800mA | 40 | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC=800 mA, IB= 80mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=800 mA, IB= 80mA | 1.2 | V | ||
| Base-emitter voltage | VBE | VCE=1V IC=10mA | 1 | V | ||
| Transition frequency | fT | VCE=10V, IC= 50mA f=30MHz | 100 | MHz |
CLASSIFICATION OF hFE(1)
| Rank | L | H | J |
| Range | 120-200 | 200-350 | 300-400 |
TYPICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified
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