High Switching Frequency Schottky Diodes , Low Power Loss Free Wheeling Diodes

Product Description

Low Power Loss Schottky Diodes High Switching Frequency For Free Wheeling Diodes​

MBR20200F.pdf
 

Schottky diode Schottky diode, also known as Schottky barrier diode (SBD for short), is a low-power, ultra-high-speed semiconductor device. The most notable feature is that the reverse recovery time is extremely short (can be as small as a few nanoseconds), and the forward voltage drop is only about 0.4V. It is mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes, and protection diodes. It is also useful as rectifier diodes and small-signal detector diodes in microwave communication circuits. It is more common in communication power supplies, frequency converters, etc.

A typical application is in the switching circuit of the bipolar transistor BJT, by connecting the Shockley diode to the BJT to clamp, so that the transistor is actually close to the off state when it is in the on state, thereby increasing the switching speed of the transistor. This method is the technique used in the TTL internal circuits of typical digital ICs such as 74LS, 74ALS, 74AS, etc.

The biggest feature of Schottky diodes is that the forward voltage drop VF is relatively small. In the case of the same current, its forward voltage drop is much smaller. Plus it has a short recovery time. It also has some disadvantages: the withstand voltage is relatively low, and the leakage current is slightly larger. It should be considered comprehensively when choosing.

Features
 

1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product
 

Applications
 

1. High frequency switch Power supply

2. Free wheeling diodes, Polarity protection applications
 

MAIN CHARACTERISTICS
 

IF(AV)	10(2×5)A
VF(max)	0.7V (@Tj=125°C)
Tj	175 °C
VRRM	100 V

 

PRODUCT MESSAGE
 

Model	Marking	Package
MBR10100	MBR10100	TO-220C
MBRF10100	MBRF10100	TO-220F
MBR10100S	MBR10100S	TO-263
MBR10100R	MBR10100R	TO-252
MBR10100V	MBR10100V	TO-251
MBR10100C	MBR10100C	TO-220

 

ABSOLUTE RATINGS (Tc=25°C)
 

Parameter			Symbol	Value	Unit
Repetitive peak reverse voltage			VRRM	100	V
Maximum DC blocking voltage			VDC	100	V
Average forward current	TC=150°C (TO-220/263/252 )TC=125°C(TO-220F)	per device   per diode	IF(AV)	10 5	A
Surge non repetitive forward current  8.3 ms single half-sine-wave (JEDECMethod)			IFSM	120	A
Maximum junction temperature			Tj	175	°C
Storage temperature range			TSTG	-40~+150	°C