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Strong Ability To Withstand Surge Current Schottky Diodes High Switching Frequency
Product Details:
| Place of Origin: | Dongguan China |
| Brand Name: | Uchi |
| Certification: | CE / RoHS / ISO9001 / UL |
| Model Number: | MBR20200 |
Payment & Shipping Terms:
| Minimum Order Quantity: | Negotiation |
|---|---|
| Price: | Negotiation |
| Packaging Details: | Export package / Negotiation |
| Delivery Time: | Negotiation |
| Payment Terms: | T/T |
| Supply Ability: | 2000000 per month |
|
Detail Information |
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| Features: | Low Power Loss, High Efficiency | Type: | Schottky Diode |
|---|---|---|---|
| Package Type: | Through Hole | Max. Forward Current: | 30A, 30A |
| Max. Forward Voltage: | 0.9V, 0.9V | Applications: | High Frequency Switch Power Supply |
| High Light: | RoHS Schottky Diodes,0.9V Schottky Diodes,Schottky Through Hole Diodes |
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Product Description
Strong Ability To Withstand Surge Current Schottky Diodes High Switching Frequency
MBR20200.pdf
Schottky diode characteristics
1. High current resistance: can withstand high surge current.
2. Low reverse withstand voltage: the general Schottky tube reverse withstand voltage is generally below 200V, generally around 100V, which limits the use of
3. High temperature resistance: the highest junction temperature of common Schottky tubes on the market is 100°C, 125°C, 150%, and 175°C (the higher the junction temperature, the better the high temperature resistance of the product. That is, the temperature at which the product works The following will not cause failure).
4. Forward voltage drop: The forward voltage drop of the Schottky diode is much lower than that of the fast recovery diode, so its own power consumption is small and the efficiency is high.
5. High temperature resistance: the highest junction temperature of common Schottky tubes on the market is 100°C, 125°C, 150%, and 175°C (the higher the junction temperature, the better the high temperature resistance of the product. That is, the temperature at which the product works The following will not cause failure).
Features
1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product
Applications
1. High frequency switch Power supply
2. Free wheeling diodes, Polarity protection applications
MAIN CHARACTERISTICS
|
IF(AV) |
10(2×5)A |
|
VF(max) |
0.7V (@Tj=125°C) |
|
Tj |
175 °C |
|
VRRM |
100 V |
PRODUCT MESSAGE
|
Model |
Marking |
Package |
|
MBR10100 |
MBR10100 |
TO-220C |
|
MBRF10100 |
MBRF10100 |
TO-220F |
|
MBR10100S |
MBR10100S |
TO-263 |
|
MBR10100R |
MBR10100R |
TO-252 |
|
MBR10100V |
MBR10100V |
TO-251 |
|
MBR10100C |
MBR10100C |
TO-220 |
ABSOLUTE RATINGS (Tc=25°C)
|
Parameter |
Symbol |
Value |
Unit |
||
|
Repetitive peak reverse voltage |
VRRM |
100 |
V |
||
|
Maximum DC blocking voltage |
VDC |
100 |
V |
||
|
Average forward current |
TC=150°C (TO-220/263/252 )TC=125°C(TO-220F) |
per device
per diode |
IF(AV) |
10 5 |
A |
|
Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod) |
IFSM |
120 |
A |
||
|
Maximum junction temperature |
Tj |
175 |
°C |
||
|
Storage temperature range |
TSTG |
-40~+150 |
°C |
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