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RoHS Approved Schottky Diode Guard Ring For Overvoltage Protection
Product Details:
| Place of Origin: | Dongguan China |
| Brand Name: | Uchi |
| Certification: | CE / RoHS / ISO9001 / UL |
| Model Number: | MBR20150 |
Payment & Shipping Terms:
| Minimum Order Quantity: | Negotiation |
|---|---|
| Price: | Negotiation |
| Packaging Details: | Export package / Negotiation |
| Delivery Time: | Negotiation |
| Payment Terms: | T/T |
| Supply Ability: | 2000000 per month |
|
Detail Information |
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| Features: | RoHS Product | Type: | Schottky Diode |
|---|---|---|---|
| Package Type: | Through Hole | Max. Forward Current: | 30A, 30A |
| Max. Forward Voltage: | 0.9V, 0.9V | Applications: | High Frequency Switch Power Supply |
| Highlight: | Guard Ring Schottky Diode,Overvoltage Protection Schottky Diode,SBD Through Hole Diode |
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Product Description
Guard Ring For Overvoltage Protection Schottky Diode With RoHS
Advantage
SBD has the advantages of high switching frequency and low forward voltage, but its reverse breakdown voltage is relatively low, mostly not higher than 60V, and the highest is only about 100V, which limits its application range. Such as freewheeling diodes of power switching devices in switching power supply (SMPS) and power factor correction (PFC) circuits, high-frequency rectifier diodes above 100V for transformer secondary, high-speed diodes of 600V~1.2kV in RCD snubber circuits, and For 600V diodes used in PFC step-up, only fast recovery epitaxial diodes (FRED) and ultra-fast recovery diodes (UFRD) are used. The reverse recovery time Trr of UFRD is also more than 20ns, which cannot meet the needs of 1MHz~3MHz SMPS in fields such as space stations. Even for an SMPS with hard switching at 100kHz, due to the large conduction loss and switching loss of UFRD, the case temperature is high, and a large heat sink is required, which increases the size and weight of the SMPS, which does not meet the miniaturization and thinning requirements. development trend. Therefore, the development of high-voltage SBDs above 100V has always been a research topic and a focus of attention. In recent years, SBD has made breakthrough progress, 150V and 200V high-voltage SBDs have been listed, and the SBD of more than 1kV made of new materials has also been successfully developed, thus injecting new vitality and vitality into its application.
Features
1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product
Applications
1. High frequency switch Power supply
2. Free wheeling diodes, Polarity protection applications
MAIN CHARACTERISTICS
|
IF(AV) |
10(2×5)A |
|
VF(max) |
0.7V (@Tj=125°C) |
|
Tj |
175 °C |
|
VRRM |
100 V |
PRODUCT MESSAGE
|
Model |
Marking |
Package |
|
MBR10100 |
MBR10100 |
TO-220C |
|
MBRF10100 |
MBRF10100 |
TO-220F |
|
MBR10100S |
MBR10100S |
TO-263 |
|
MBR10100R |
MBR10100R |
TO-252 |
|
MBR10100V |
MBR10100V |
TO-251 |
|
MBR10100C |
MBR10100C |
TO-220 |
ABSOLUTE RATINGS (Tc=25°C)
|
Parameter |
Symbol |
Value |
Unit |
||
|
Repetitive peak reverse voltage |
VRRM |
100 |
V |
||
|
Maximum DC blocking voltage |
VDC |
100 |
V |
||
|
Average forward current |
TC=150°C (TO-220/263/252 )TC=125°C(TO-220F) |
per device
per diode |
IF(AV) |
10 5 |
A |
|
Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod) |
IFSM |
120 |
A |
||
|
Maximum junction temperature |
Tj |
175 |
°C |
||
|
Storage temperature range |
TSTG |
-40~+150 |
°C |
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