Common Cathode Structure Schottky Diode For Polarity Protection Applications

Product Description

Common Cathode Structure Schottky Diode For Polarity Protection Applications​

MBR10200.pdf

A Schottky diode is a metal-semiconductor device made of a noble metal (gold, silver, aluminum, platinum, etc.) A as the positive electrode and an N-type semiconductor B as the negative electrode, and the potential barrier formed on the contact surface of the two has rectification characteristics. Because there are a large number of electrons in the N-type semiconductor and only a small amount of free electrons in the noble metal, the electrons diffuse from B with high concentration to A with low concentration. Obviously, there are no holes in metal A, and there is no diffusion of holes from A to B. As electrons continue to diffuse from B to A, the electron concentration on the surface of B gradually decreases, and the surface electrical neutrality is destroyed, thus forming a potential barrier, and its electric field direction is B→A. However, under the action of the electric field, the electrons in A will also produce a drift motion from A→B, thus weakening the electric field formed due to the diffusion motion. When a space charge region of a certain width is established, the electron drift movement caused by the electric field and the electron diffusion movement caused by different concentrations reach a relative balance, forming a Schottky barrier.

Features
 

1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product
 

Applications
 

1. High frequency switch Power supply

2. Free wheeling diodes, Polarity protection applications
 

MAIN CHARACTERISTICS
 

IF(AV)	10(2×5)A
VF(max)	0.7V (@Tj=125°C)
Tj	175 °C
VRRM	100 V

 

PRODUCT MESSAGE
 

Model	Marking	Package
MBR10100	MBR10100	TO-220C
MBRF10100	MBRF10100	TO-220F
MBR10100S	MBR10100S	TO-263
MBR10100R	MBR10100R	TO-252
MBR10100V	MBR10100V	TO-251
MBR10100C	MBR10100C	TO-220

 

ABSOLUTE RATINGS (Tc=25°C)
 

Parameter			Symbol	Value	Unit
Repetitive peak reverse voltage			VRRM	100	V
Maximum DC blocking voltage			VDC	100	V
Average forward current	TC=150°C (TO-220/263/252 )TC=125°C(TO-220F)	per device   per diode	IF(AV)	10 5	A
Surge non repetitive forward current  8.3 ms single half-sine-wave (JEDECMethod)			IFSM	120	A
Maximum junction temperature			Tj	175	°C
Storage temperature range			TSTG	-40~+150	°C