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High Current Resistance Schottky Diode For High Frequency Switch Power Supply
Product Details:
| Place of Origin: | Dongguan China |
| Brand Name: | Uchi |
| Certification: | CE / RoHS / ISO9001 / UL |
| Model Number: | MBR20100 |
Payment & Shipping Terms:
| Minimum Order Quantity: | Negotiation |
|---|---|
| Price: | Negotiation |
| Packaging Details: | Export package / Negotiation |
| Delivery Time: | Negotiation |
| Payment Terms: | T/T |
| Supply Ability: | 2000000 per month |
|
Detail Information |
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| Features: | RoHS Product | Type: | Schottky Diode |
|---|---|---|---|
| Package Type: | Through Hole | Max. Forward Current: | 30A, 30A |
| Max. Forward Voltage: | 0.9V, 0.9V | Max. Reverse Voltage: | 200V |
| High Light: | High Current Resistance Schottky Diode,ISO9001 Certified Schottky Diode,200V Through Hole Diode |
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Product Description
High Current Resistance Schottky Diode For High Frequency Switch Power Supply
MBR20100.pdf
The internal circuit structure of a typical Schottky rectifier is based on an N-type semiconductor substrate, on which an N-epitaxial layer with arsenic as a dopant is formed. The anode uses materials such as molybdenum or aluminum to make the barrier layer. Silicon dioxide (SiO2) is used to eliminate the electric field in the edge area and improve the withstand voltage value of the tube. The N-type substrate has a very small on-state resistance, and its doping concentration is 100% higher than that of the H-layer. An N+ cathode layer is formed under the substrate to reduce the contact resistance of the cathode. By adjusting the structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal, as shown in the figure. When a forward bias is applied to both ends of the Schottky barrier (the anode metal is connected to the positive pole of the power supply, and the N-type substrate is connected to the negative pole of the power supply), the Schottky barrier layer becomes narrower and its internal resistance becomes smaller; otherwise, if When a reverse bias is applied to both ends of the Schottky barrier, the Schottky barrier layer becomes wider and its internal resistance becomes larger.
Features
1. Common cathode structure
2. Low power loss, high efficiency
3. High Operating Junction Temperature
4. Guard ring for overvoltage protection,High reliability
5. RoHS product
Applications
1. High frequency switch Power supply
2. Free wheeling diodes, Polarity protection applications
MAIN CHARACTERISTICS
|
IF(AV) |
10(2×5)A |
|
VF(max) |
0.7V (@Tj=125°C) |
|
Tj |
175 °C |
|
VRRM |
100 V |
PRODUCT MESSAGE
|
Model |
Marking |
Package |
|
MBR10100 |
MBR10100 |
TO-220C |
|
MBRF10100 |
MBRF10100 |
TO-220F |
|
MBR10100S |
MBR10100S |
TO-263 |
|
MBR10100R |
MBR10100R |
TO-252 |
|
MBR10100V |
MBR10100V |
TO-251 |
|
MBR10100C |
MBR10100C |
TO-220 |
ABSOLUTE RATINGS (Tc=25°C)
|
Parameter |
Symbol |
Value |
Unit |
||
|
Repetitive peak reverse voltage |
VRRM |
100 |
V |
||
|
Maximum DC blocking voltage |
VDC |
100 |
V |
||
|
Average forward current |
TC=150°C (TO-220/263/252 )TC=125°C(TO-220F) |
per device
per diode |
IF(AV) |
10 5 |
A |
|
Surge non repetitive forward current 8.3 ms single half-sine-wave (JEDECMethod) |
IFSM |
120 |
A |
||
|
Maximum junction temperature |
Tj |
175 |
°C |
||
|
Storage temperature range |
TSTG |
-40~+150 |
°C |
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